Reactive Ion Etching (RIE)

Etching > Dry Etching

Description

Reactive Ion Etching (RIE) is a method that combines both chemical and physical etching to allow isotropic and anisotropic material removal.

The etching process is carried out in a chemically reactive plasma containing positively and negatively charged ions generated from gases that are pumped into the...

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List of Available Tools

Tool Make and Model

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SAMCO ICP-RIE 400iP (ANU)

Cl- ICP-RIE for etching III-V semiconductors

ACT

ACT

  • Description
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  • Tool Owner
  • Description

    Inductively Coupled plasma etch tool for etching III-V semiconductors, no metals etching

  • Related Information

    Available gases: Cl2, BCl3, SiCl4, H2, O2, Ar – Electrode/sample heating up to 200°C

  • Tool Owner

SAMCO ICP-RIE 400iP (ANU)

Cl- ICP-RIE for etching III-V semiconductors

ACT

ACT

  • Description
  • Related Information
  • Tool Owner
  • Description

    Inductively Coupled plasma etch tool for etching III-V semiconductors, no metals etching

  • Related Information

    Available gases: Cl2, BCl3, SiCl4, H2, O2, Ar – Electrode/sample heating up to 200°C

  • Tool Owner

Oxford Instruments Plasmalab 100 (UNSW)

Plasma enhanced chemical vapour deposition system (PECVD)

NSW

NSW

  • Description
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  • Tool Owner
  • Description

    More information to come

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    More information to come

  • Tool Owner

STS ICP-DRIE (UNSW)

Inductively coupled plasma (ICP) reactive ion etcher

NSW

NSW

  • Description
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  • Tool Owner
  • Description

    More information to come

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    More information to come

  • Tool Owner

Custom Reactive Ion Etcher (UNSW)

Hollow-cathode RIE

NSW

NSW

  • Description
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  • Tool Owner
  • Description

    More information to come

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    More information to come

  • Tool Owner

Oxford Instruments PlasmaPro NGP80 (UQ)

Reactive ion etcher (RIE)

QLD

QLD

  • Description
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  • Description

    Dry etching of materials using CF4, CHF3, SF6, O2, or Argon gases

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    Etching of silicon-based materials systems such as SiO2, Si, SiN, SiC.

    Sample size 4 – 8 inch wafer. 

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Oxford Instruments Plasmalab80 (UWA)

System for plasma enhanced chemical vapour deposition system (PECVD) and reactive ion etching (RIE)

WA

WA

  • Description
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  • Description

    Low stress plasma chemical vapour deposition of low-stress films to satisfy mechanical requirement of MEMS devices

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    Process gases: SiH4, NH3, N2O, O2/CF4.

    Typical deposited materials: Si, SiOx, SiNx, and certain other materials upon request.

  • Tool Owner

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