Capabilities
List of Available Tools
Tool Make and Model
Key Differentiator
Node
SAMCO ICP-RIE 400iP (ANU)
Cl- ICP-RIE for etching III-V semiconductors
ACT
ACT
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Description
Inductively Coupled plasma etch tool for etching III-V semiconductors, no metals etching
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Related Information
Available gases: Cl2, BCl3, SiCl4, H2, O2, Ar – Electrode/sample heating up to 200°C
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Tool Owner
SAMCO ICP-RIE 400iP (ANU)
Cl- ICP-RIE for etching III-V semiconductors
ACT
ACT
-
Description
Inductively Coupled plasma etch tool for etching III-V semiconductors, no metals etching
-
Related Information
Available gases: Cl2, BCl3, SiCl4, H2, O2, Ar – Electrode/sample heating up to 200°C
-
Tool Owner
Oxford Instruments Plasmalab 100 (UNSW)
Plasma enhanced chemical vapour deposition system (PECVD)
NSW
NSW
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Description
More information to come
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Related Information
More information to come
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Tool Owner
STS ICP-DRIE (UNSW)
Inductively coupled plasma (ICP) reactive ion etcher
NSW
NSW
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Description
More information to come
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Related Information
More information to come
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Tool Owner
Custom Reactive Ion Etcher (UNSW)
Hollow-cathode RIE
NSW
NSW
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Description
More information to come
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Related Information
More information to come
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Tool Owner
Oxford Instruments PlasmaPro NGP80 (UQ)
Reactive ion etcher (RIE)
QLD
QLD
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Description
Dry etching of materials using CF4, CHF3, SF6, O2, or Argon gases
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Related Information
Etching of silicon-based materials systems such as SiO2, Si, SiN, SiC.
Sample size 4 – 8 inch wafer.
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Tool Owner
Oxford Instruments Plasmalab80 (UWA)
System for plasma enhanced chemical vapour deposition system (PECVD) and reactive ion etching (RIE)
WA
WA
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Description
Low stress plasma chemical vapour deposition of low-stress films to satisfy mechanical requirement of MEMS devices
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Related Information
Process gases: SiH4, NH3, N2O, O2/CF4.
Typical deposited materials: Si, SiOx, SiNx, and certain other materials upon request.
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Tool Owner