Capabilities
List of Available Tools
Tool Make and Model
Key Differentiator
Node
SAMCO ICP-RIE 400iP (ANU)
Cl-ICP-RIE for etching III-V semiconductors
ACT
ACT
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Description
Inductively Coupled plasma etch tool for etching III-V semiconductors, no metals etching
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Related Information
Available gases: Cl2, BCl3, SiCl4, H2, O2, Ar – Electrode/sample heating up to 200°C
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Tool Owner
SAMCO ICP-RIE 400iP (Si) (ANU)
F-based ICP-RIE for etching SiOx, SiNx, Si
ACT
ACT
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Description
Inductively Coupled plasma etch tool for etching SiOx, SiNx, Si, Ge, etc
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Related Information
Available gases: CHF3, SF6, H2, CH4, O2, Ar – Electrode/sample at 20°C
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Tool Owner
Oxford Instruments Plasmalab 100 (UNSW)
Plasma enhanced chemical vapour deposition system (PECVD)
NSW
NSW
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Description
More information to come
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Related Information
More information to come
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Tool Owner
STS ICP-DRIE (UNSW)
Inductively coupled plasma (ICP) reactive ion etcher
NSW
NSW
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Description
More information to come
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Related Information
More information to come
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Tool Owner
Custom Reactive Ion Etcher (UNSW)
Hollow-cathode RIE
NSW
NSW
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Description
More information to come
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Related Information
More information to come
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Tool Owner
Oxford Instruments PlasmaPro NGP80 (UQ)
Reactive ion etcher (RIE)
QLD
QLD
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Description
Dry etching of materials using CF4, CHF3, SF6, O2, or Argon gases
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Related Information
Etching of silicon-based materials systems such as SiO2, Si, SiN, SiC.
Sample size 4 – 8 inch wafer.
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Tool Owner
Oxford Instruments Plasmalab80 (UWA)
System for plasma enhanced chemical vapour deposition system (PECVD) and reactive ion etching (RIE)
WA
WA
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Description
Low stress plasma chemical vapour deposition of low-stress films to satisfy mechanical requirement of MEMS devices
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Related Information
Process gases: SiH4, NH3, N2O, O2/CF4.
Typical deposited materials: Si, SiOx, SiNx, and certain other materials upon request.
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Tool Owner
Intlvac Nanoquest II IBE (UTS)
RIBE with omnidirectional stage and SIMS end point control
Optofab
Optofab
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Description
The intlvac Ion Beam etcher, located in the UTS Physics Clean room, utilises accelerated ionised gases to physically and chemically etch materials, generating smooth etches and nanoarchitectures per the users designs. This etching system is complemented with a SIMS probe, capable of end point detection for multi layer etches. This unit is capable of generating a plasma with argon, oxygen and/or SF6, giving a range of physical and chemical etch mechanics.
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Related Information
Ar/O2/SF6 ion beam etching, rotational/tilted stage, Stage cooling, SIMS end point detection, >1nm RMS roughness across 6″ wafer.
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Tool Owner
