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Plasma etching
Plasma etching
Plasma etching uses a finely controlled plasma to selectively remove material from a substrate.
List of available equipment
TOOL MAKE AND MODEL
KEY DIFFERENTIATOR
LOCATION
LAM Autoetch 480
Plasma Asher
Griffith University
QLD Node
Description
Plasma etching of 6 inch wafers using a semi-isotropic dry etch process. Can produce features of 3µm.
Related Information
Utilises SF6 and O. Used to etch SiC, SiN and SiO2 and polymer resists.
Tool Contact
glenn.walker@griffith.edu.au
South Bay RIE3000
O2 Plasma Asher/RIE
NSW Node
University of Sydney
Description
Reactive ion etch system dedicated to O2 and Ar plasma processes
Related Information
Used primarily for resist and sample cleaning.
Tool Contact
rpf.queries@sydney.edu.au
TOOL MAKE AND MODEL
KEY DIFFERENTIATOR
LOCATION
LAM Autoetch 480
Plasma Asher
NSW Node
University of Sydney
Description
Plasma etching of 6 inch wafers using a semi-isotropic dry etch process. Can produce features of 3µm.
Related Information
Utilises SF6 and O. Used to etch SiC, SiN and SiO2 and polymer resists.
Tool Contact
glenn.walker@griffith.edu.au
TOOL MAKE AND MODEL
KEY DIFFERENTIATOR
LOCATION
South Bay RIE3000
O2 Plasma Asher/RIE
NSW Node
University of Sydney
Description
Reactive ion etch system dedicated to O2 and Ar plasma processes
Related Information
Used primarily for resist and sample cleaning.
Tool Contact
rpf.queries@sydney.edu.au