Plasma Enhanced Chemical Vapour Deposition (PECVD)

Deposition > Chemical Vapour Deposition (CVD)

Description

Plasma Enhanced Chemical Vapour Deposition (PECVD) uses a plasma to deposit a thin film of silicon dioxide or silicon nitrate onto a substrate. PECVD uses lower temperatures than the furnace systems to achieve an insulating layer on a variety of materials.

PECVD is used in optics, microelectronics, energy...

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List of Available Tools

Tool Make and Model

Key Differentiator

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Oxford Instruments Plasmalab 100 (ANU)

Plasma enhanced chemical vapour deposition system (PECVD) for depositing SiOx, SiNx, a-Si

ACT

ACT

  • Description
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  • Tool Owner
  • Description

    Deposit dielectrics SiOx, SiNx and amorphous Si

  • Related Information

    Maximum electrode/sample temperature 650°C

  • Tool Owner

Atomate CVD (UoN)

Chemical vapour deposition (CVD) system for carbon nanotube and graphene growth

Materials Node

Materials Node

  • Description
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  • Tool Owner
  • Description

    Chemical Vapour Deposition specifically to fabricate materials such as carbon nanotubes or graphene by exposing a substrate to reactive precursors.

  • Related Information

    Furnace tube has an inner diameter of 50 μm.

  • Tool Owner

Oxford Instruments Plasmalab 100 (UNSW)

Plasma enhanced chemical vapour deposition system (PECVD)

NSW

NSW

  • Description
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  • Tool Owner
  • Description

    More information to come

  • Related Information

    More information to come

  • Tool Owner

Labec / MKS HTF40/12 / Various (Flinders)

Tube furnace and chemical vapour deposition system (CVD)

SA

SA

  • Description
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  • Tool Owner
  • Description

    High temperature furnace with a programmable gas flow system.

  • Related Information

    Up to 1,200°C quartz tube furnace attached to a programmable 4 channel gas flow manifold suitable for chemical vapour deposition.

  • Tool Owner

Sentech SI 500D (UWA)

System for ICP plasma deposition

WA

WA

  • Description
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  • Tool Owner
  • Description

    Variable plasma properties providing high density, low ion energy, and low pressure plasma deposition of dielectric films. A large variety of substrates from wafers up to 200 mm diameter to parts loaded on carriers can be processed.

  • Related Information

    Gases: NH3, N2O, SF6, CH4, CF4, SiH4, O2, H2, etc.

    Typical deposited materials: Si, SiOx, SiNx, and certain other materials upon request.

  • Tool Owner

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