Capabilities
List of Available Tools
Tool Make and Model
Key Differentiator
Node
Oxford Instruments Plasmalab 100 (ANU)
Plasma enhanced chemical vapour deposition system (PECVD) for depositing SiOx, SiNx, a-Si
ACT
ACT
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Description
Deposit dielectrics SiOx, SiNx and amorphous Si
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Related Information
Maximum electrode/sample temperature 650°C
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Tool Owner
Atomate CVD (UoN)
Chemical vapour deposition (CVD) system for carbon nanotube and graphene growth
Materials Node
Materials Node
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Description
Chemical Vapour Deposition specifically to fabricate materials such as carbon nanotubes or graphene by exposing a substrate to reactive precursors.
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Related Information
Furnace tube has an inner diameter of 50 μm.
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Tool Owner
Oxford Instruments Plasmalab 100 (UNSW)
Plasma enhanced chemical vapour deposition system (PECVD)
NSW
NSW
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Description
More information to come
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Related Information
More information to come
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Tool Owner
Labec / MKS HTF40/12 / Various (Flinders)
Tube furnace and chemical vapour deposition system (CVD)
SA
SA
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Description
High temperature furnace with a programmable gas flow system.
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Related Information
Up to 1,200°C quartz tube furnace attached to a programmable 4 channel gas flow manifold suitable for chemical vapour deposition.
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Tool Owner
Sentech SI 500D (UWA)
System for ICP plasma deposition
WA
WA
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Description
Variable plasma properties providing high density, low ion energy, and low pressure plasma deposition of dielectric films. A large variety of substrates from wafers up to 200 mm diameter to parts loaded on carriers can be processed.
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Related Information
Gases: NH3, N2O, SF6, CH4, CF4, SiH4, O2, H2, etc.
Typical deposited materials: Si, SiOx, SiNx, and certain other materials upon request.
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Tool Owner
