Plasma Enhanced Chemical Vapour Deposition (PECVD)
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Plasma Enhanced Chemical Vapour Deposition (PECVD)

Plasma Enhanced Chemical Vapour Deposition (PECVD) uses a plasma to deposit a thin film of silicon dioxide or silicon nitrate onto a substrate. PECVD uses lower temperatures than the furnace systems to achieve an insulating layer on a variety of materials.PECVD is used in optics, microelectronics, energy applications, packaging and chemistry for the deposition of anti-reflective coatings, scratch resistant transparent coatings, electronically active layers, passivation layers, dielectric layers, isolating layers, etch stop layers, encapsulation and chemical protective coatings.

List of available equipment
TOOL MAKE AND MODEL
KEY DIFFERENTIATOR
LOCATION
Atomate CVD
Chemical vapour deposition (CVD) system for carbon nanotube and graphene growth
Materials Node University of Newcastle
Description
Chemical Vapour Deposition specifically to fabricate materials such as carbon nanotubes or graphene by exposing a substrate to reactive precursors.
Related Information
Furnace tube has an inner diameter of 50 μm.
Tool Contact
anff@newcastle.edu.au
Labec / MKS HTF40/12 / Various
Tube furnace and chemical vapour deposition system (CVD)
Flinders University SA Node
Description
High temperature furnace with a programmable gas flow system.
Related Information
Up to 1,200°C quartz tube furnace attached to a programmable 4 channel gas flow manifold suitable for chemical vapour deposition.
Tool Contact
Simon.Doe@unisa.edu.au
Oxford Instruments Plasmalab 100 – PECVD setup
Plasma enhanced chemical vapour deposition system (PECVD)
NSW Node University of New South Wales
Description
PECVD
Related Information
More information to come.
Tool Contact
anff@unsw.edu.au
Oxford Instruments Plasmalab 100 ICP380 – PECVD setup
Plasma enhanced chemical vapour deposition system (PECVD) for depositing SiOx and SiN
Melbourne Centre for Nanofabrication VIC Node
Description
Offers fast, affordable deposition at relatively low temperatures.
Related Information
Deposits SiO2, Si3N4, and amorphous Silicon at 100-400 degrees C.
Tool Contact
mcn-enquiries@nanomelbourne.com
Oxford Instruments Plasmalab 100
Plasma enhanced chemical vapour deposition system (PECVD) for depositing SiOx, SiNx, a-Si
ACT Node Australian National University (ANU)
Description
Deposit dielectrics SiOx, SiNx and amorphous Si
Related Information
Maximum electrode/sample temperature 650°C
Tool Contact
horst.punzmann@anu.edu.au
Oxford Instruments Plasmalab80 plus ICPCVD
University of Western Australia WA Node
Description
Plasma Technology Plasmalab80
Related Information
More information to come.
Tool Contact
anff-wa@uwa.edu.au
Sentech SI 500D
System for ICP plasma deposition
University of Western Australia WA Node
Description
Variable plasma properties providing high density, low ion energy, and low pressure plasma deposition of dielectric films. A large variety of substrates from wafers up to 200 mm diameter to parts loaded on carriers can be processed.
Related Information
Gases: NH3, N2O, SF6, CH4, CF4, SiH4, O2, H2, etc. Typical deposited materials: Si, SiOx, SiNx, and certain other materials upon request.
Tool Contact
anff-wa@uwa.edu.au
TOOL MAKE AND MODEL
KEY DIFFERENTIATOR
LOCATION
Atomate CVD
Chemical vapour deposition (CVD) system for carbon nanotube and graphene growth
University of Western Australia WA Node
Description
Chemical Vapour Deposition specifically to fabricate materials such as carbon nanotubes or graphene by exposing a substrate to reactive precursors.
Related Information
Furnace tube has an inner diameter of 50 μm.
Tool Contact
anff@newcastle.edu.au
TOOL MAKE AND MODEL
KEY DIFFERENTIATOR
LOCATION
Labec / MKS HTF40/12 / Various
Tube furnace and chemical vapour deposition system (CVD)
University of Western Australia WA Node
Description
High temperature furnace with a programmable gas flow system.
Related Information
Up to 1,200°C quartz tube furnace attached to a programmable 4 channel gas flow manifold suitable for chemical vapour deposition.
Tool Contact
Simon.Doe@unisa.edu.au
TOOL MAKE AND MODEL
KEY DIFFERENTIATOR
LOCATION
Oxford Instruments Plasmalab 100 – PECVD setup
Plasma enhanced chemical vapour deposition system (PECVD)
University of Western Australia WA Node
Description
PECVD
Related Information
More information to come.
Tool Contact
anff@unsw.edu.au
TOOL MAKE AND MODEL
KEY DIFFERENTIATOR
LOCATION
Oxford Instruments Plasmalab 100 ICP380 – PECVD setup
Plasma enhanced chemical vapour deposition system (PECVD) for depositing SiOx and SiN
University of Western Australia WA Node
Description
Offers fast, affordable deposition at relatively low temperatures.
Related Information
Deposits SiO2, Si3N4, and amorphous Silicon at 100-400 degrees C.
Tool Contact
mcn-enquiries@nanomelbourne.com
TOOL MAKE AND MODEL
KEY DIFFERENTIATOR
LOCATION
Oxford Instruments Plasmalab 100
Plasma enhanced chemical vapour deposition system (PECVD) for depositing SiOx, SiNx, a-Si
University of Western Australia WA Node
Description
Deposit dielectrics SiOx, SiNx and amorphous Si
Related Information
Maximum electrode/sample temperature 650°C
Tool Contact
horst.punzmann@anu.edu.au
TOOL MAKE AND MODEL
KEY DIFFERENTIATOR
LOCATION
Oxford Instruments Plasmalab80 plus ICPCVD
University of Western Australia WA Node
Description
Plasma Technology Plasmalab80
Related Information
More information to come.
Tool Contact
anff-wa@uwa.edu.au
TOOL MAKE AND MODEL
KEY DIFFERENTIATOR
LOCATION
Sentech SI 500D
System for ICP plasma deposition
University of Western Australia WA Node
Description
Variable plasma properties providing high density, low ion energy, and low pressure plasma deposition of dielectric films. A large variety of substrates from wafers up to 200 mm diameter to parts loaded on carriers can be processed.
Related Information
Gases: NH3, N2O, SF6, CH4, CF4, SiH4, O2, H2, etc. Typical deposited materials: Si, SiOx, SiNx, and certain other materials upon request.
Tool Contact
anff-wa@uwa.edu.au