Molecular Beam Epitaxy (MBE)

Deposition > Physical Vapour Deposition (PVD)

Description

Molecular Beam Epitaxy is a deposition technique that allows for crystals to be grown with extremely high purity. The process allows for subnanometre control over the structure of the crystal as it’s grown and positioning of dopants within the material, as well as film thickness.

A series of molecular...

Key Applications

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List of Available Tools

Tool Make and Model

Key Differentiator

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Veeco Gen930 (UNSW)

Molecular Beam Epitaxy (MBE) system for III-V materials

NSW

NSW

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  • Tool Owner
  • Description

    More information to come

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    More information to come

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Pascal Laser MBE (UNSW)

dual chamber laser-MBE system

NSW

NSW

  • Description
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  • Tool Owner
  • Description

    More information to come

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    More information to come

  • Tool Owner

Custom 32B Molecular Beam Epitaxy System (Se source) (UWA)

MBE for II-VI Hg-based semiconductors

WA

WA

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  • Tool Owner
  • Description

    Versatile tool that deposits precise amounts of material onto substrates. Often used to design and create semiconductor structures for manufacturing many novel devices.

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    Features an in-situ x-ray photoelectron spectroscope for observations during MBE growth.

    Materials: ultra pure Hg, Cd, Te, CdTe, and II-VI Hg-based semiconductors.

  • Tool Owner

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