Capabilities
List of Available Tools
Tool Make and Model
Key Differentiator
Node
Aixtron 3x2FT (ANU)
MOCVD CCS (Close-Coupled Showerhead) system for growth of III-V (III-As, III-P, III-Sb) semiconductor structures
ACT
ACT
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Description
Epitaxial growth of III-V (arsenide, phosphide and antimonide based materials) 2D and 3D semiconductor structures.
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Related Information
A range of available sources (Ga, Al, In, C, Si, Mg, Zn, Sb and As, P in hydride and alkyl forms) allows for the growth of wide range of semiconductor structures for various applications. Growth can be done on various substrates (GaAs, InP, InAs, GaP, Si etc.) and various crystal orientation up to 4″ diameter and surface temperature up to 800C.
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Tool Owner
Aixtron 3x2FT (ANU)
MOCVD CCS (Close-Coupled Showerhead) system for growth of III-V (III-As, III-P, III-Sb) semiconductor structures
ACT
ACT
-
Description
Epitaxial growth of III-V (arsenide, phosphide and antimonide based materials) 2D and 3D semiconductor structures.
-
Related Information
A range of available sources (Ga, Al, In, C, Si, Mg, Zn, Sb and As, P in hydride and alkyl forms) allows for the growth of wide range of semiconductor structures for various applications. Growth can be done on various substrates (GaAs, InP, InAs, GaP, Si etc.) and various crystal orientation up to 4″ diameter and surface temperature up to 800C.
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Tool Owner
Aixtron 200/4 (ANU)
MOCVD (horizontal flow) system for epitaxial growth of III-V semiconductor structures.
ACT
ACT
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Description
Epitaxial growth of III-V (arsenide, phosphide and antimonide based materials) 2D and 3D semiconductor structures.
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Related Information
A range of available sources (Ga, Al, In, Sn, Si, Zn, Sb and As, P) allows for the growth of wide range of semiconductor structures for various applications including metal catalysed nanostructures. Growth can be done on various substrates (GaAs, InP, InAs, GaP, Si etc.) and various crystal orientation up to 4″ diameter and surface temperature up to 700C.
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Tool Owner
