Metal-Organic Chemical Vapour Deposition (MOCVD)

Deposition > Chemical Vapour Deposition (CVD)

Description

MOCVD is a chemical vapour deposition technique that uses metal-organic precursors to enable the growth of III-V semiconductors in two and three dimensions.

Key Applications

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List of Available Tools

Tool Make and Model

Key Differentiator

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Aixtron  3x2FT (ANU)

MOCVD CCS (Close-Coupled Showerhead) system for growth of III-V (III-As, III-P, III-Sb) semiconductor structures

ACT

ACT

  • Description
  • Related Information
  • Tool Owner
  • Description

    Epitaxial growth of III-V (arsenide, phosphide and antimonide based materials) 2D and 3D semiconductor structures.

  • Related Information

    A range of available sources (Ga, Al, In, C, Si, Mg, Zn, Sb and As, P in hydride and alkyl forms) allows for the growth of wide range of semiconductor structures for various applications. Growth can be done on various substrates (GaAs, InP, InAs, GaP, Si etc.) and various crystal orientation up to 4″ diameter and surface temperature up to 800C.

  • Tool Owner

Aixtron  3x2FT (ANU)

MOCVD CCS (Close-Coupled Showerhead) system for growth of III-V (III-As, III-P, III-Sb) semiconductor structures

ACT

ACT

  • Description
  • Related Information
  • Tool Owner
  • Description

    Epitaxial growth of III-V (arsenide, phosphide and antimonide based materials) 2D and 3D semiconductor structures.

  • Related Information

    A range of available sources (Ga, Al, In, C, Si, Mg, Zn, Sb and As, P in hydride and alkyl forms) allows for the growth of wide range of semiconductor structures for various applications. Growth can be done on various substrates (GaAs, InP, InAs, GaP, Si etc.) and various crystal orientation up to 4″ diameter and surface temperature up to 800C.

  • Tool Owner

Aixtron  200/4 (ANU)

MOCVD (horizontal flow) system for epitaxial growth of III-V semiconductor structures.

ACT

ACT

  • Description
  • Related Information
  • Tool Owner
  • Description

    Epitaxial growth of III-V (arsenide, phosphide and antimonide based materials) 2D and 3D semiconductor structures.

  • Related Information

    A range of available sources (Ga, Al, In, Sn, Si, Zn, Sb and As, P) allows for the growth of wide range of semiconductor structures for various applications including metal catalysed nanostructures. Growth can be done on various substrates (GaAs, InP, InAs, GaP, Si etc.) and various crystal orientation up to 4″ diameter and surface temperature up to 700C.

  • Tool Owner

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