Capabilities
List of Available Tools
Tool Make and Model
Key Differentiator
Node
Raith 150 (ANU)
Electron beam lithography (EBL) system
ACT
ACT
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Description
Electron-beam lithography tool for sub-µm features, accurate positioning
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Related Information
30kV acceleration voltage, fixed beam moving stage, writing field up to 800×800 µm2
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Tool Owner
FEI Sirion (UNSW)
Electron beam lithography (EBL) system
NSW
NSW
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Description
More information to come
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Related Information
More information to come
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Tool Owner
Vistec EBL 5000 (MCN)
Electron beam lithography (EBL) system
VIC
VIC
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Description
EBL that is capable of exposing thick layers of e-beam resist of up to several micrometres with small forward scattering.
Fully automated equipment features a laser height measurement for automatic focus adjustment.
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Related Information
Can produces ~10nm structures.
Metrology functions for self-calibration.
Operates at up to 100 keV acceleration voltage.
The electron beam spot can be focused to less than 5 nm in diameter.
A wide range of beam currents (200 pA – 150 nA) are available for high-throughput as well as high-resolution exposures.
6-inch wafers and mask blanks measuring up to 5 × 5 inches can be processed.
Rapid exposure with 50 MHz pattern generator.
A laser-guided substrate stage provides 15 nm field stitching error.
Maximum writing field of 1 x 1 mm.
The overlay accuracy is below 20nm.
For the conversion of the CAD patterns into machine specific format, including proximity effect correction (PEC), special software, TRACER and BEAMER from GenIsys GmbH are used.
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Tool Owner
