Electron Beam Lithography (EBL)

Lithography > Direct Write Lithography

Description

Electron Beam Lithography (EBL) allows users to write patterns with extremely high resolution, smaller than 10nm in size. It makes use of a highly energetic, tightly focused electron beam, which is scanned over a sample coated with an electron-sensitive resist. The electron beam scans the image according...

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List of Available Tools

Tool Make and Model

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Raith 150 (ANU)

Electron beam lithography (EBL) system

ACT

ACT

  • Description
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  • Description

    Electron-beam lithography tool for sub-µm features, accurate positioning

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    30kV acceleration voltage, fixed beam moving stage, writing field up to 800×800 µm2

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FEI Sirion (UNSW)

Electron beam lithography (EBL) system

NSW

NSW

  • Description
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  • Description

    More information to come

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    More information to come

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Vistec EBL 5000 (MCN)

Electron beam lithography (EBL) system

VIC

VIC

  • Description
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  • Description

    EBL that is capable of exposing thick layers of e-beam resist of up to several micrometres with small forward scattering.

    Fully automated equipment features a laser height measurement for automatic focus adjustment.

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    Can produces ~10nm structures.

    Metrology functions for self-calibration.

    Operates at up to 100 keV acceleration voltage.

    The electron beam spot can be focused to less than 5 nm in diameter.

    A wide range of beam currents (200 pA – 150 nA) are available for high-throughput as well as high-resolution exposures.

    6-inch wafers and mask blanks measuring up to 5 × 5 inches can be processed.

    Rapid exposure with 50 MHz pattern generator.

    A laser-guided substrate stage provides 15 nm field stitching error.

    Maximum writing field of 1 x 1 mm.

    The overlay accuracy is below 20nm.

    For the conversion of the CAD patterns into machine specific format, including proximity effect correction (PEC), special software, TRACER and BEAMER from GenIsys GmbH are used.

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