Deep Reactive Ion Etching (DRIE)

Etching > Dry Etching

Description

Deep Reactive Ion Etching (DRIE) is effectively an extension of the Reactive Ion Etching (RIE) process, but can provide higher aspect ratio structures.

The DRIE process alternates between etch and passivation cycles to allow patterns to be cut deeper into a substrate.

Etch channels or other feature...

Key Applications

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List of Available Tools

Tool Make and Model

Key Differentiator

Node

Plasma-Therm Versaline (UQ)

Deep reactive ion etcher (DRIE)

QLD

QLD

  • Description
  • Related Information
  • Tool Owner
  • Description

    Controlled dry anisotropic etching of silicon wafers up to 6 inches in diameter utilising the Bosch process. The deep silicon etching (DSE) process alternates between deposition and isotropic etching in a chamber with an ICP configuration.

  • Related Information

    Etching of silicon only.

    The deposition gas is typically C4F8 and the etching gas is commonly SF6.

    Gases available: SF6, C4F8, argon and oxygen.

    Substrate is 6 inch wafer.

    Fast silicon etch rate of 3 – 5 µm/min with a deep vertical wall.

  • Tool Owner

Ulvac NLD-570 (UniSA)

Deep reactive ion etcher (DRIE)

SA

SA

  • Description
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  • Tool Owner
  • Description

    Capable of deep etching features from the nano to micron scale.

  • Related Information

    Etch channel or other feature geometries with extremely high uniformity into glass, plastic or silicon substrates.

  • Tool Owner

Oxford Instruments Plasmalab 100 ICP380 (MCN)

Deep reactive ion etcher (DRIE) capable of Bosch process

VIC

VIC

  • Description
  • Related Information
  • Tool Owner
  • Description

    Silicon-specific dry etching with good control over feature size and Bosch process capability for high aspect ratio structures.

  • Related Information

    SF6 gas is turned in to a plasma using RF power. The plasma that is created is highly reactive to Silicon. The SF6 combined with a passivating chemistry using C4F8, which is used to control the Silicon etching profile.

  • Tool Owner

Oxford Instruments Plasmalab 100 ICP380 (MCN)

Deep reactive ion etcher (DRIE) capable of Bosch process

VIC

VIC

  • Description
  • Related Information
  • Tool Owner
  • Description

    Silicon-specific dry etching with good control over feature size and Bosch process capability for high aspect ratio structures.

  • Related Information

    SF6 gas is turned in to a plasma using RF power. The plasma that is created is highly reactive to Silicon. The SF6 combined with a passivating chemistry using C4F8, which is used to control the Silicon etching profile.

  • Tool Owner

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