Capabilities
List of Available Tools
Tool Make and Model
Key Differentiator
Node
Plasma-Therm Versaline (UQ)
Deep reactive ion etcher (DRIE)
QLD
QLD
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Description
Controlled dry anisotropic etching of silicon wafers up to 6 inches in diameter utilising the Bosch process. The deep silicon etching (DSE) process alternates between deposition and isotropic etching in a chamber with an ICP configuration.
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Related Information
Etching of silicon only.
The deposition gas is typically C4F8 and the etching gas is commonly SF6.
Gases available: SF6, C4F8, argon and oxygen.
Substrate is 6 inch wafer.
Fast silicon etch rate of 3 – 5 µm/min with a deep vertical wall.
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Tool Owner
Ulvac NLD-570 (UniSA)
Deep reactive ion etcher (DRIE)
SA
SA
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Description
Capable of deep etching features from the nano to micron scale.
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Related Information
Etch channel or other feature geometries with extremely high uniformity into glass, plastic or silicon substrates.
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Tool Owner
Oxford Instruments Plasmalab 100 ICP380 Bosch (MCN)
Deep reactive ion etcher (DRIE) capable of Bosch process
VIC
VIC
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Description
Silicon-specific dry etching with good control over feature size and Bosch process capability for high aspect ratio structures.
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Related Information
SF6 gas is turned in to a plasma using RF power. The plasma that is created is highly reactive to Silicon. The SF6 combined with a passivating chemistry using C4F8, which is used to control the Silicon etching profile.
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Tool Owner
Oxford Instruments Plasmalab 100 ICP380 (MCN)
Deep reactive ion etcher (DRIE)
VIC
VIC
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Description
General dry reactive etching of wide range of materials using chlorine and fluorine gases.
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Related Information
Reactive species and ions are used to react with the substrate that is placed in the reactor to etch Si, SiO2, SI3N4, SiC, a-Si, Ti, TiW, Mo, Nb, Ta, Graphene and other 2D materials, Cr, Au, LiNbO3, Al, Al2O3, Hf, Hf02, TiN, TiO2, and more.
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Tool Owner
