Atomic Layer Deposition (ALD)

Deposition > Atomic Layer Deposition (ALD)

Description

Atomic Layer Deposition (ALD) involves the deposition of materials one atomic monolayer at a time. It forms extremely uniform, conformal, pin-hole-free coatings even on high-aspect-ratio structures. This is achieved by pulsing a chemical precursor onto a hydroxylated substrate surface which reacts,...

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List of Available Tools

Tool Make and Model

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Picosun Sunale (ANU)

Atomic layer deposition (ALD) system for depositing Al, Zn, Ti, Hf, Ta, Si oxides and TiN

ACT

ACT

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  • Description

    Load-locked ALD system with thermal and plasma ALD processes

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    Sources for: Ti, Zn, Al, Si, Hf, Ta, Zr

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Cambridge NanoTech Savannah S200 (UNSW)

Atomic layer deposition (ALD) system with two precursor sources

NSW

NSW

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  • Description

    More information to come

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    More information to come

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Cambridge NanoTech Fiji 200 (MCN)

Plasma assisted atomic layer deposition (PA-ALD) System

VIC

VIC

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  • Description

    The Fiji F200 is capable of both thermal and Plasma Assisted ALD (PA-ALD). PA-ALD expands the window for materials by decreasing activation energy and allows for deposition at lower temperatures to reduce precursor decomposition, deposition times and film contaminations. This tool is equipped to enable Cambridge Nanotech’s unique Exposure Mode™ for thin film deposition on ultra high aspect ratio substrates. In-situ film growth can be monitored using a spectroscopic ellipsometry.

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    Substrate size – Up to 6 inch diameter.

    Maximum substrate heating – 500°C.

    Available ALD films- Al2O3, TiO2, SiO2, SnO2, ZnO, Ta2O5, MoO3, HfO2, TiN, AZO.

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Cambridge NanoTech Savannah S100 (MCN)

Atomic layer deposition (ALD) system in a glovebox

VIC

VIC

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  • Description

    This glovebox-integrated thermal ALD system allows the user to deposit materials in controlled environments.

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    Available films- Al2O3, TiO2, WO3, NiOx. Compatible up to 4 inch diameter sample size

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