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Annealing
Annealing
Annealing is a process that can reduce residual stress in a substrate that has accumulated during prior processes such as deposition.The material is heated to high temperatures and allowed to cool at a controlled rate. This allows the material’s crystal structure to relax into a less intrinsically stressed state, and to settle into a more desirable microstructure as it cools.
List of available equipment
TOOL MAKE AND MODEL
KEY DIFFERENTIATOR
LOCATION
Anealsys AS-One150 RTA
Rapid thermal annealer
University of Western Australia
WA Node
Description
A cold wall bench top rapid thermal processor, to provide high cooling rates and low memory effect of the process chamber
Related Information
Process gases: nitrogen, oxygen, forming gas. Max rate of 50°C/s.
Tool Contact
anff-wa@uwa.edu.au
Jipelec JetFirst
Rapid thermal annealer
ACT Node
Australian National University (ANU)
Description
To anneal and bake semiconductors or polymer samples.Maximum temperature: 1,400 degrees C (5 minutes max, lower temperatures up to 15 minutes max).
Related Information
Available gases include O2 and CF4. The system is suitable to remove organic/polymers but also dielectics including SiOx
Tool Contact
horst.punzmann@anu.edu.au
SVCS SVSFUR-FP
Furnace for atmospheric pressure diffusion, annealing, and LPCVD
Melbourne Centre for Nanofabrication
VIC Node
Description
The SVCS four-stack horizontal furnace system with a HEPA controlled loading station with small batch processing options. The four processing tubes cater for atmospheric pressure diffusion, atmospheric pressure annealing and the low-pressure chemical vapour deposition of low strain and stoichiometric silicon nitride.
Related Information
Atmospheric pressure diffusion furnaces - phosphorous and boron doping. Atmospheric pressure annealing/oxidizing (dry) furnace for Si/SiO2 only. LPCVD furnace for silicon nitride with controlled film stress. Batch process - up to 50 wafers. Substrate size - up to 6" wafers
Tool Contact
mcn-enquiries@nanomelbourne.com
Thermco clean silicon annealing
Furnace
NSW Node
University of New South Wales
Description
clean anneal furnace (MOS)
Related Information
More information to come.
Tool Contact
anff@unsw.edu.au
Thermco GP annealing
General purpose furnace
NSW Node
University of New South Wales
Description
general purpose anneal furnace
Related Information
More information to come.
Tool Contact
anff@unsw.edu.au
Jipelec Jetfirst
Rapid thermal annealer
NSW Node
University of New South Wales
Description
rapid thermal annealer
Related Information
More information to come.
Tool Contact
anff@unsw.edu.au
TOOL MAKE AND MODEL
KEY DIFFERENTIATOR
LOCATION
Anealsys AS-One150 RTA
Rapid thermal annealer
NSW Node
University of New South Wales
Description
A cold wall bench top rapid thermal processor, to provide high cooling rates and low memory effect of the process chamber
Related Information
Process gases: nitrogen, oxygen, forming gas. Max rate of 50°C/s.
Tool Contact
anff-wa@uwa.edu.au
TOOL MAKE AND MODEL
KEY DIFFERENTIATOR
LOCATION
Jipelec JetFirst
Rapid thermal annealer
NSW Node
University of New South Wales
Description
To anneal and bake semiconductors or polymer samples.Maximum temperature: 1,400 degrees C (5 minutes max, lower temperatures up to 15 minutes max).
Related Information
Available gases include O2 and CF4. The system is suitable to remove organic/polymers but also dielectics including SiOx
Tool Contact
horst.punzmann@anu.edu.au
TOOL MAKE AND MODEL
KEY DIFFERENTIATOR
LOCATION
SVCS SVSFUR-FP
Furnace for atmospheric pressure diffusion, annealing, and LPCVD
NSW Node
University of New South Wales
Description
The SVCS four-stack horizontal furnace system with a HEPA controlled loading station with small batch processing options. The four processing tubes cater for atmospheric pressure diffusion, atmospheric pressure annealing and the low-pressure chemical vapour deposition of low strain and stoichiometric silicon nitride.
Related Information
Atmospheric pressure diffusion furnaces - phosphorous and boron doping. Atmospheric pressure annealing/oxidizing (dry) furnace for Si/SiO2 only. LPCVD furnace for silicon nitride with controlled film stress. Batch process - up to 50 wafers. Substrate size - up to 6" wafers
Tool Contact
mcn-enquiries@nanomelbourne.com
TOOL MAKE AND MODEL
KEY DIFFERENTIATOR
LOCATION
Thermco clean silicon annealing
Furnace
NSW Node
University of New South Wales
Description
clean anneal furnace (MOS)
Related Information
More information to come.
Tool Contact
anff@unsw.edu.au
TOOL MAKE AND MODEL
KEY DIFFERENTIATOR
LOCATION
Thermco GP annealing
General purpose furnace
NSW Node
University of New South Wales
Description
general purpose anneal furnace
Related Information
More information to come.
Tool Contact
anff@unsw.edu.au
TOOL MAKE AND MODEL
KEY DIFFERENTIATOR
LOCATION
Jipelec Jetfirst
Rapid thermal annealer
NSW Node
University of New South Wales
Description
rapid thermal annealer
Related Information
More information to come.
Tool Contact
anff@unsw.edu.au