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AJA sputtering system RF/DC

The AJA ATC-2200 system has two RF and two DC power generators which can cater for various material depositions. It is equipped with a vacuum load-lock which gives two major advantages of higher throughput and better film quality.

Argon, nitrogen and oxygen are available for use in reactive ion sputtering applications. The reactive gas chemically combines with the target material to form a different material on the substrate. The substrate holder can be heated up to 350 degress Celsius for a higher sputtering rate and the system is also capable of applying RF-bias to do sample sputtering clean before deposition.

The substrate holder is designed for an 8 inch wafer, butit can also be adjusted to hold 4-6 inch wafers. The substrate holder can be rotated during deposition to improve film uniformity.

Fabrication step: Micro and nano fabrication
Function: Deposition
Location: University of Queensland
Purpose: The plasma enhanced deposition technique is used to generate a variety of materials at the atomic scale. Novel materials and structures are formed in the presence of the reactive gases.
Material systems: Inorganic target compounds, dielectric materials and/or metals
Node: Queensland
Scale/volume: Single wafer processing up to 8 inches
Specifications/resolution: Reactive gases: N2, O2, Ar, H2 and NH3, 6 Targets 3 RF and 3 DC, a loadlock robotic system, plasma cleaning and a base vacuum of to 10-9 Torr.