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STS inductively coupled plasma reactive ion etching ICP RIE

STS inductively coupled plasma reactive ion etching ICP RIE

Fabrication step: Micro and nano fabrication
Function: Etching
Location: University of New South Wales
Purpose: deep, high aspect ratio Si etching
Material systems: Silicon Oxides
Node: New South Wales
Scale/volume: Single wafer up to 100mm diameter
Specifications/resolution: Bosch process for high aspect silicon etching