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Raith 150TWO electron beam lithography system EBL

Raith 150TWO electron beam lithography system EBL

Fabrication step: Micro and nano fabrication
Function: Lithography
Location: University of New South Wales
Purpose: high resolution lithography (wafer scale)
Material systems: Semiconductors (eg. Si, GaAs ), Insulators (eg. Glass, Quartz, Sapphire)
Node: New South Wales
Scale/volume: Single wafer up to 200mm diameter (max write field 150 x 150mm)
Specifications/resolution: sub-10nm lithography; 10-30keV accelerating voltage; Fixed Beam Moving Stage option (stitch-free patterning over 150mm)