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FEI Sirion/NPGS electron beam lithography system EBL

FEI Sirion/NPGS electron beam lithography system EBL

Fabrication step: Micro and nano fabrication
Function: Lithography
Location: University of New South Wales
Purpose: high resolution lithography (chip scale)
Material systems: Semiconductors (eg. Si, GaAs ), Insulators (eg. Glass, Quartz, Sapphire)
Node: New South Wales
Scale/volume: Single chip up to max 50x50mm
Specifications/resolution: sub-10nm lithography; 500V - 30kV accelerating voltage