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CNT Savannah S200 atomic layer deposition system ALD

Atomic Layer Deposition System ALD

Fabrication step: Micro and nano fabrication
Function: Deposition
Location: University of New South Wales
Purpose: deposition of thin dielectric layers (Al2O3, HfO2)
Material systems: Depositing: Al2O3, HfO2
Node: New South Wales
Scale/volume: Single wafer up to max 200mm diameter
Specifications/resolution: depositing Al2O3 or HfO2