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Reactive ion etching (RIE)

Reactive ion etching (RIE) is an etching technology which uses chemically reactive plasma to remove materials. The plasma is generated under low pressure by an electromagnetic field which is typically set to a frequency of 13.56 MHz at a few hundred Watts.

In addition to a chemical process, the physical bombardment by high-energy ions from the plasma also plays important role during the etching process.

Fabrication step: Micro and nano fabrication
Function: Etching
Location: Australian National University
Purpose: Patterning, etching
Material systems: III-V compound semiconductors, SiOx, SiNx
Node: Australian Capital Territory
Scale/volume: up to 8 inch substrate
Specifications/resolution: Gases: H2, CH4, CHF3, Ar, O2