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Atomic layer deposition

Atomic layer deposition (ALD) is a thin film deposition technique based on sequential surface chemistry to deposit conformal thin-films of materials onto substrates of varying compositions. With the ALD system at EME, a wide range of oxides including Al2O3, HfO2, SiO2, TiO2, ZnO can be deposited at temperatures up to 400°C.

Fabrication step: Micro and nano fabrication
Function: Deposition
Location: Australian National University
Purpose: Isolation/materials/passivation
Material systems: Al2O3, HfO2, TiO2, ZnO
Node: Australian Capital Territory
Scale/volume: up to 4 inch substrate
Specifications/resolution: Conformal deposition, sub-nm thickness control, 400°C stage.