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AIXTRON metal organic chemical vapour deposition MOCVD

Two new reactors are expected to be installed and operational in Q1-2013. The first reactor is dedicated to the epitaxial growth of GaN and related materials while the second is for As-, P- and Sb-based semiconductors.

In both reactors nano-wires and quantum well structures will be grown for material and device applications.

Fabrication step: Micro and nano fabrication
Function: Deposition
Location: Australian National University
Purpose: Epitaxial growth of nanowires and GaN based materials and devices
Material systems: III V nitrides nanowires and quantum dots
Node: Australian Capital Territory
Scale/volume: Up to 100mm wafers
Specifications/resolution: 6 group III lines 4 group V lines 3 dopant lines in situ monitoring (reflectance anisotropy spectroscopy) glovebox gas filters H2 purifier scrubber and toxic alarm monitirng system