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GAM excimer laser

Lasers are used for applications that required a light source that has a highly specific wavelength with a very narrow slit width. Lasers are used quite frequently in nano and micro-lithography processes that are often referred to as photo-lithography. They are used for the manufacture of soft-polymer resists so that nano- or micron-sized features can be etched onto silicon wafers or chips.

ANFF has access to two laser systems, the excimer 157nm F2 laser and the GAM excimer 193nm ArF laser. The lasers are connected to a specialized optics system for a customized beam area.

Examples of Use

  • Optical features below 37nm can be etched into wafers using immersion lithography with the refractive index of the immersed liquid (liquid between the laser lens and resist material) being the limit on the feature size.
  • Features around the 65nm size can be obtained using the 157nm and 193nm lasers using photolithography. Optical masks for the design of silicon wafers or chips, for gratings in fine optical systems or for micro-needles for biological applications can be made using photo¬resists such as poly(methyl methacrylate-stat-methacrylic acid) made with these laser systems.
Fabrication step: Material Synthesis and Macro fabrication
Function: Subtractive fabrication
Location: University of Queensland
Purpose: Part of the laser exposure system (193 ArF and 157 F2 nm) for the manufacture of soft polymer resists using a nano or micro lithography process.
Material systems: organic and polymers
Node: Queensland
Scale/volume: Beam is 3mm x 8mm but with optics can be set to 8mm x 8mm at 0mm from optics and x7 at 200mm from optics and x2 at a further 200mm from optics
Specifications/resolution: 1 1000Hz pulse rate, 10 14 filament voltage, maximum energy of 8mJ@193nm and power 5W@193nm