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Spectral Ellipsometer

The JA Woollam M2000D ellipsometer at the ANFF ACT Node allows accurate measurements of refractive index and thickness of various types of layers spanning dielectrics, semiconductors and thin metal films. Some of the system features are:

• Spectral range from UV till mid infrared (193-1690nm) enabling measurement on dielectrics but also on most common GaN-, GaAs- and InP-based layers;
• Automatic angles from 45 to 90°;
• All wavelengths acquired simultaneously;
• Typical data acquisitions times 1 to 5 seconds;
• Automated Sample Translation for wafer mapping up to 150mm;
• Focused beam size to ~ 300µm.

The system is supported by powerful software to analyse data with possibility of various models such as Cauchy or Tauc-Lorentz models. The system resolution is as small as 1nm (semiconductor native oxide can be measured). This ellipsometer compliments the existing instrument at the WA Node that has a spectral range of 2-20µm.

Fabrication step: Characterisation
Function: Surface - thin films
Location: Australian National University
Purpose: Spectral ellipsometer to give information about optical properties of multi layered samples.
Material systems: GaN-, GaAs- and InP-based layers
Node: Australian Capital Territory
Scale/volume: Spectral range from UV till mid infrared (193-1690nm)
Specifications/resolution: Automatic angles from 45 to 90° All wavelengths acquired simultaneously. Automated Sample Translation for wafer mapping up to 150mm Focused beam size to ~ 300µm Has powerful analysis software